Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection

The authors report on investigation of type-II InAs/GaSb and InAs/InxGa1−xSb strained layer superlattices SLSs for long-wave infrared detection. Growth conditions were optimized to obtain nearly lattice matched a /a 0.03% 13 ML InAs/7 ML GaSb SLS nBn detector structure with cutoff wavelength of 8.5 m 77 K . Dark current density was equal to 3.2 10−4 A /cm2 Vb =+50 mV, 77 K for this detector structure. Thin 10 ML InAs/6 ML In0.35Ga0.65Sb SLS was grown with zero lattice mismatch achieved by incorporation of 2.5 ML of GaAs in every SLS period. © 2010 American Vacuum Society. DOI: 10.1116/1.3276429